| 摘要 |
The objective of the present invention is to properly form a metal-containing layer on a substrate. An organic solution is supplied from an organic solution nozzle (143) onto a wafer (W) and an organic layer (F) is formed on the wafer (W) ((a) of figure 6). A metal-containing solution including metal (M) dissolved in alcohol is supplied from a metal-containing nozzle (150) to the wafer (W), alcohol is supplied to the organic layer (F), and the metal (M) is infiltrated into the organic layer (F) through the alcohol, thereby forming a metal-containing layer (C) on the wafer (W) ((b) of figure 6). |
