METAL PRECURSOR AND METAL CONTAINING THIN FILM PREPARED BY USING THE SAME

摘要

The present invention provides a metal precursor represented by the following chemical formula 1, which is favorable to a high-temperature process by having superior thermal stability to thereby provide high productivity and solve problems occurring during a refining process, and is useful to form a thin film for an advanced DRAM through chemical vapor deposition, especially, metal-organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD) process, because the metal precursor of a liquid state has high volatility and sufficient vapor pressure. The present invention also provides a metal containing thin film prepared by using the metal precursor. In the formula 1, M, R, Xa to Xc and m are as defined in the specification.