Nonvolatile memory device and method of reading data in nonvolatile memory device

摘要

A method is provided for reading data in a nonvolatile memory device. The method includes performing a first read operation on multiple multi-level memory cells (MLCs), performing a first sensing operation on at least one flag cell corresponding to the MLCs, selectively performing a second read operation on the MLCs based on a result of the first sensing operation, and performing a second sensing operation on the at least one flag cell when the second read operation is performed. Read data is output based on results of the first read operation and the first sensing operation when the second read operation is not performed, and the read data is output based on result of the first read operation, the first sensing operation, the second read operation and the second sensing operation when the second read operation is performed. The read data corresponds to programmed data in the MLCs.

主权项

1. A method of reading data in a nonvolatile memory device, the method comprising:
performing a first read operation on a plurality of multi-level memory cells (MLCs); performing a first sensing operation on at least one flag cell corresponding to the plurality of MLCs; selectively performing a second read operation on the plurality of MLCs based on a result of the first sensing operation; performing a second sensing operation on the at least one flag cell when the second read operation is performed; and outputting read data based on a result of the first read operation and the result of the first sensing operation when the second read operation is not performed, and outputting the read data based on the result of the first read operation, the result of the first sensing operation, a result of the second read operation and a result of the second sensing operation when the second read operation is performed, the read data corresponding to programmed data in the plurality of MLCs.