| 发明名称 | Back-side MOM/MIM devices | ||
| 摘要 | Back-side MOM/MIM structures are integrated on a device with front-side circuitry. Embodiments include forming a substrate having a front side and a back side that is opposite the front side, the substrate including circuitry on the front side of the substrate; and forming a metal-oxide-metal (MOM) capacitor, a metal-insulator-metal (MIM) capacitor, or a combination thereof on the back side of the substrate. Other embodiments include forming a through-silicon via (TSV), in the substrate, connecting the MOM capacitor, the MIM capacitor, or a combination thereof to the circuitry on the front side of the substrate. | ||
| 申请公布号 | US8759947(B2) | 申请公布日期 | 2014.06.24 |
| 申请号 | US201213430778 | 申请日期 | 2012.03.27 |
| 申请人 | GLOBALFOUNDRIES Singapore Pte. Ltd. | 发明人 | Tan Juan Boon;Lim Yeow Kheng;Yuan Shao Ning;Siah Soh Yun;Gong Shunqiang |
| 分类号 | H01L21/02 | 主分类号 | H01L21/02 |
| 代理机构 | Ditthavong Mori & Steiner, P.C. | 代理人 | Ditthavong Mori & Steiner, P.C. |
| 主权项 | 1. A method comprising: forming a substrate having a front side and a back side that is opposite the front side, the substrate including circuitry on the front side of the substrate; and forming a metal-oxide-metal (MOM) capacitor, a metal-insulator-metal (MIM) capacitor, or a combination thereof, on the back side of the substrate; wherein the circuitry on the front side of the substrate includes a front-side MOM capacitor, a front-side MIM capacitor, or a combination thereof; each of the front-side and back-side capacitors comprising a plurality of layers, and wherein dimensions of each layer of the back-side capacitors are substantially greater than dimensions of each layer of the front-side capacitors. | ||
| 地址 | Singapore SG | ||