Full silicidation prevention via dual nickel deposition approach

摘要

Semiconductor devices are formed without full silicidation of the gates and with independent adjustment of silicides in the gates and source/drain regions. Embodiments include forming a gate on a substrate, forming a nitride cap on the gate, forming a source/drain region on each side of the gate, forming a first silicide in each source/drain region, removing the nitride cap subsequent to the formation of the first silicide, and forming a second silicide in the source/drain regions and in the gate, subsequent to removing the nitride cap. Embodiments include forming the first silicide by forming a first metal layer on the source/drain regions and performing a first RTA, and forming the second silicide by forming a second metal layer on the source/drain regions and on the gate and performing a second RTA.

主权项

1. A device comprising:
a substrate; a gate on the substrate; a source/drain region in the substrate on each side of the gate; a spacer on each side of the gate; a first silicide in the upper portion of the gate, the first silicide having a first thickness; and a second silicide in each source/drain region being separated from an inner side of each of the spacers, and having an inner side vertically aligned with an outer side of the spacers and an upper surface horizontally aligned with a lower surface of the spacers, wherein the second silicide has a second thickness at the inner side greater than the first thickness.