| 发明名称 | Two-dimensional shielded gate transistor device and method of manufacture | ||
| 摘要 | A shielded gate transistor device may include one or more shield electrodes formed in a semiconductor substrate at a first level and one or more gate electrodes formed in the semiconductor substrate at a second level that is different from the first level. One or more portions of the one or more gate electrodes overlap one or more portions of the one or more shield electrodes. At least a portion of the gate electrodes is oriented non-parallel to the one or more shield electrodes. The shield electrodes are electrically insulated from the semiconductor substrate and the one or more gate electrodes are electrically insulated from the substrate and shield electrodes. | ||
| 申请公布号 | US8759908(B2) | 申请公布日期 | 2014.06.24 |
| 申请号 | US201113286733 | 申请日期 | 2011.11.01 |
| 申请人 | Alpha and Omega Semiconductor Incorporated | 发明人 | Lui Sik;Bhalla Anup;Ng Daniel |
| 分类号 | H01L29/78 | 主分类号 | H01L29/78 |
| 代理机构 | JDI Patent | 代理人 | Isenberg Joshua D.;JDI Patent |
| 主权项 | 1. A shielded gate transistor device, comprising: a semiconductor substrate; one or more shield electrodes formed in the semiconductor substrate at a first level, wherein the one or more shield electrodes are electrically insulated from the semiconductor substrate; one or more gate electrodes formed in the semiconductor substrate at a second level that is different from the first level, wherein the one or more gate electrodes are electrically insulated from the semiconductor substrate and the one or more shield electrodes, wherein at least a portion of the one or more gate electrodes is oriented non-parallel to the one or more shield electrodes, wherein one or more portions of the one or more gate electrodes overlap one or more portions of the one or more shield trenches. | ||
| 地址 | Sunnyvale CA US | ||