Semiconductor device having stacked body on substrate via joining metal and method for manufacturing the same

摘要

According to one embodiment, a semiconductor device includes a substrate and a stacked body on the substrate via a joining metal layer. The stacked body includes a device portion and a peripheral portion. The device portion includes from a bottommost layer to a topmost layer included in the stacked body. The peripheral portion surrounding and provided around the device portion; the peripheral portion is a portion of the bottommost layer to the topmost layer included in the stacked body and includes a portion of a semiconductor layer in contact with the joining metal layer.

主权项

1. A semiconductor device comprising:
a substrate; and a stacked body on the substrate via a joining metal layer comprising:
a device portion including from a bottommost layer to a topmost layer included in the stacked body, anda peripheral portion surrounding and provided around the device portion, the peripheral portion being a portion of the bottommost layer to the topmost layer included in the stacked body and including a portion of a semiconductor layer in contact with the joining metal layer,the semiconductor layer being one selected from Inx(GayAl1−y)1−xP (0≦x≦1 and 0≦y≦1), BxInyGazAl1−x−y−zN (0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z≦l) and GaAlAs.