| 发明名称 | ZnO-based semiconductor device and manufacturing method thereof | ||
| 摘要 | A ZnO-based semiconductor device includes an n type ZnO-based semiconductor layer, an aluminum oxide film formed on the n type ZnO-based semiconductor layer, and a palladium layer formed on the aluminum oxide film. With this configuration, the n type ZnO-based semiconductor layer and the palladium layer form a Schottky barrier structure. | ||
| 申请公布号 | US8759828(B2) | 申请公布日期 | 2014.06.24 |
| 申请号 | US201213445593 | 申请日期 | 2012.04.12 |
| 申请人 | Rohm Co., Ltd.;Tohoku University | 发明人 | Akasaka Shunsuke;Kawasaki Masashi;Tsukazaki Atsushi |
| 分类号 | H01L29/22 | 主分类号 | H01L29/22 |
| 代理机构 | Rabin & Berdo, P.C. | 代理人 | Rabin & Berdo, P.C. |
| 主权项 | 1. A ZnO-based semiconductor device, comprising: an n-type ZnO-based semiconductor layer; an aluminum oxide film formed on the n-type ZnO-based semiconductor layer; and a palladium layer formed on the aluminum oxide film, wherein the n-type ZnO-based semiconductor layer, the aluminum oxide film and the palladium layer form a metal insulator semiconductor Schottky barrier junction. | ||
| 地址 | Kyoto JP | ||