| 发明名称 | Semiconductor structure and method for making same | ||
| 摘要 | One or more embodiments relate to a method of forming a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a seed layer over the barrier layer; forming an inhibitor layer over the seed layer; removing a portion of said inhibitor layer to expose a portion of the seed layer; and selectively depositing a fill layer on the exposed seed layer. | ||
| 申请公布号 | US8759207(B2) | 申请公布日期 | 2014.06.24 |
| 申请号 | US201213671583 | 申请日期 | 2012.11.08 |
| 申请人 | Infineon Technologies AG | 发明人 | Barth Hans-Joachim;Vaupel Mathias;Steiner Rainer;Robl Werner;Pohl Jens;Plagmann Joem;Beer Gottfried |
| 分类号 | H01L21/20 | 主分类号 | H01L21/20 |
| 代理机构 | Infineon Technologies AG | 代理人 | Infineon Technologies AG ;Schlazer Philip |
| 主权项 | 1. A method of forming a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over said workpiece; forming a seed layer over said barrier layer; forming an inhibitor layer over said seed layer; removing a portion of said inhibitor layer to expose a portion of said seed layer; and selectively depositing a fill layer on said exposed seed layer,wherein substantially none of said fill layer selectively deposits on said inhibitor layer. | ||
| 地址 | Neubiberg DE | ||