Methods and apparatus for selective epitaxy of Si-containing materials and substitutionally doped crystalline Si-containing material

摘要

The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

主权项

1. A method for forming an epitaxial film on a substrate in a chemical vapor deposition system, comprising:
providing a substrate disposed within a chamber; introducing a silicon precursor and a carbon precursor to said chamber at a temperature of less than 550° C., wherein said silicon precursor is accompanied with a carrier gas wherein said carrier gas has a flow rate 200 times greater than the flow rate of said a silicon precursor; and forming an epitaxial film on at least a portion of said substrate wherein said epitaxial film as formed is relatively defect free, comprises in the range of at least about 1.8 atomic % to at least about 3.0 atomic percent substitutional carbon dopant and contains less than 5E17 atom/cm3 oxygen.