| 发明名称 | Methods of fabricating CMOS image sensors | ||
| 摘要 | An image sensor device includes a substrate including a light sensing region therein and a reflective structure on a first surface of the substrate over the light sensing region. An interconnection structure having a lower reflectivity than the reflective structure is provided on the first surface of the substrate adjacent to the reflective structure. A microlens is provided on a second surface of the substrate opposite the first surface. The microlens is configured to direct incident light to the light sensing region, and the reflective structure is configured to reflect portions of the incident light that pass through the light sensing region back toward the light sensing region. Related devices and fabrication methods are also discussed. | ||
| 申请公布号 | US8759137(B2) | 申请公布日期 | 2014.06.24 |
| 申请号 | US201313918604 | 申请日期 | 2013.06.14 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Park Byung-Jun |
| 分类号 | H01L21/00 | 主分类号 | H01L21/00 |
| 代理机构 | Myers Bigel Sibley & Sajovec, P.A. | 代理人 | Myers Bigel Sibley & Sajovec, P.A. |
| 主权项 | 1. A method of fabricating an image sensor device, the method comprising: forming a reflective structure on a first surface of a substrate over a light sensing region therein; forming an interconnection structure having a lower reflectivity than the reflective structure on the first surface of the substrate adjacent to the reflective structure; and providing a microlens on a second surface of the substrate opposite the first surface, wherein the microlens is configured to focus incident light on the light sensing region, and wherein the reflective structure is configured to reflect portions of the incident light that pass through the light sensing region back toward the light sensing region. | ||
| 地址 | KR | ||