Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane course

摘要

A method is used for producing an SiC volume monocrystal by sublimation growth. During growth, by sublimation of a powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is bent during a heating phase before such that an SiC crystal structure with a non-homogeneous course of lattice planes is adjusted, the lattice planes at each point have an angle of inclination relative to the direction of the center longitudinal axis and peripheral angles of inclination at a radial edge of the SiC seed crystal differ in terms of amount by at least 0.05° and at most by 0.2° from a central angle of inclination at the site of the center longitudinal axis.

主权项

1. A method for producing an SiC volume monocrystal by means of sublimation growth, which comprises the steps of:
disposing an SiC seed crystal in a crystal growth region of a growth crucible before a beginning of growth; introducing a powdery SiC source material into an SiC storage region of the growth crucible; producing a SiC growth gas phase during a growth period by means of sublimation of the powdery SiC source material and by means of transport of sublimated gaseous components into the crystal growth region, the SiC volume monocrystal having a central center longitudinal axis grows by means of deposition from the SiC growth gas phase on the SiC seed crystal; bending the SiC seed crystal during a heating phase before the beginning of the growth period such that an SiC crystal structure with a non-homogeneous course of lattice planes is adjusted in the SiC seed crystal, the lattice planes at each point have an angle of inclination relative to a direction of the center longitudinal axis, and peripheral angles of inclination at a radial edge of the SiC seed crystal differ in terms of amount by at least 0.05° and by at most 0.2° from a central angle of inclination at a site of the central center longitudinal axis; and propagating the SiC crystal structure, of the SiC seed crystal, with the non-homogeneous course of the lattice planes during growth from the SiC seed crystal into the growing SiC volume monocrystal.