| 发明名称 | Mechanisms for built-in self repair of memory devices using failed bit maps and obvious repairs | ||
| 摘要 | A method of self-testing and self-repairing a random access memory (RAM) is includes collecting failure data of the RAM with redundant rows and columns, wherein the failure data of all failed cells of the RAM are stored in two failure bit map (FBM) data structures. The method further includes performing obvious repair of failed cells during the collecting of the failure data and analyzing the failure data in the two FBM data structure to determine repair methods. The method further includes repairing failed cells of the RAM by using the redundant rows and columns. | ||
| 申请公布号 | US8760949(B2) | 申请公布日期 | 2014.06.24 |
| 申请号 | US201313942040 | 申请日期 | 2013.07.15 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Shvydun Volodymyr;Adham Saman M. I. |
| 分类号 | G11C7/00 | 主分类号 | G11C7/00 |
| 代理机构 | Lowe Hauptman & Ham, LLP | 代理人 | Lowe Hauptman & Ham, LLP |
| 主权项 | 1. A method of self-testing and self-repairing a random access memory (RAM), comprising: collecting failure data of the RAM with redundant rows and columns, wherein the failure data of all failed cells of the RAM are stored in two failure bit map (FBM) data structures; performing obvious repair of failed cells during the collecting of the failure data; analyzing the failure data in the two FBM data structure to determine repair methods; and repairing failed cells of the RAM by using the redundant rows and columns. | ||
| 地址 | TW | ||