| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device according to one embodiment includes: a semiconductor substrate provided with a semiconductor element; a connecting member formed above the semiconductor substrate configured to electrically connect upper and lower conductive members; a first insulating film formed in the same layer as the connecting member; a wiring formed on the connecting member, the wiring including a first region and a second region, the first region contacting with a portion of an upper surface of the connecting member, and the second region located on the first region and having a width greater than that of the first region; and a second insulating film formed on the first insulating film so as to contact with at least a portion of the first region of the wiring and with a bottom surface of the second region. | ||
| 申请公布号 | US8759983(B2) | 申请公布日期 | 2014.06.24 |
| 申请号 | US200912361979 | 申请日期 | 2009.01.29 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Wada Makoto;Kajita Akihiro;Higashi Kazuyuki |
| 分类号 | H01L29/41 | 主分类号 | H01L29/41 |
| 代理机构 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A semiconductor device, comprising: a semiconductor substrate provided with a semiconductor element; a connecting member formed above the semiconductor substrate, having a planar shape of a circle or an ellipse, and configured to electrically connect upper and lower conductive members; a first insulating film formed in the same layer as the connecting member; a wiring formed on the connecting member, the wiring having a length direction and a width direction and including a first region and a second region, each of the first and second regions extending in the length direction and having a length greater than a diameter of the circle or a major axis length of the ellipse, the first region contacting with a portion of an upper surface of the connecting member and including a first portion and a second portion, the second region being located on the first region and having a width greater than a width of the first region, the first portion being located between the connecting member and the second region, the second portion being located between the first insulating film and the second region, and a portion of the wiring being in contact with a side of the connecting member; and a second insulating film formed on the first insulating film so as to contact with at least a portion of the first region of the wiring and with a bottom surface of the second region of the wiring. | ||
| 地址 | Tokyo JP | ||