Semiconductor device including vertical transistor and method for manufacturing the same

摘要

A semiconductor device including a vertical transistor and a method for forming the same are disclosed, which can greatly reduce a cell area as compared to a conventional layout of 8F2 and 6F2, and need not form a bit line contact, a storage node contact, or a land plug, such that the number of fabrication steps is reduced and a contact region between the bit line and the active region is increased in size. The semiconductor device including a vertical transistor includes an active region formed over a semiconductor substrate, a first recess formed to have a predetermined depth at both sides of the active region, and a bit line buried in the first recess.

主权项

1. A semiconductor device including a vertical transistor, the device comprising:
an active pillar vertically protruded from a semiconductor substrate; a first recess formed at both sidewalls of a lower portion of the active pillar; a bit line buried in the first recess; a second recess formed over the first recess in the active pillar; and a word line formed to cross the bit line, and buried in the second recess.