发明名称 Optical element, and optical device and terahertz time-domain spectroscopic apparatus including the same
摘要 An optical element includes a semiconductor layer having an energy band gap larger than a photon energy of light, and a plurality of electrodes in electrical contact with the semiconductor layer. At least one of the electrodes forms a Schottky junction between the electrode and the semiconductor layer; the Schottky junction has a barrier height smaller than the photon energy of the light. At least part of a junction surface between the electrode that forms the Schottky junction and the semiconductor layer includes a light irradiation surface arranged to be irradiated with the light from a surface of the semiconductor layer without the electrodes, and a portion of a coupling structure arranged to be coupled to a terahertz wave that is generated or detected through the irradiation with the light.
申请公布号 US8759771(B2) 申请公布日期 2014.06.24
申请号 US201113031014 申请日期 2011.02.18
申请人 Canon Kabushiki Kaisha 发明人 Ouchi Toshihiko
分类号 H01L27/144 主分类号 H01L27/144
代理机构 Canon U.S.A., Inc. IP Division 代理人 Canon U.S.A., Inc. IP Division
主权项 1. An optical device arranged to generate or detect a terahertz wave, the optical device comprising: a laser light source configured to output light; an optical element configured to generate or detect the terahertz wave when the optical element is irradiated with the light; and an optical unit configured to direct the light from the laser light source to the optical element, wherein the optical element includes: a semiconductor layer; and a plurality of electrodes formed in electrical contact with the semiconductor layer and including an antenna configured to couple the terahertz wave and a space, wherein at least one of the electrodes forms a Schottky junction between the one electrode and the semiconductor layer; wherein the laser light source outputs the light whose photon energy is larger than a barrier height of the Schottky junction and smaller than an energy band gap of the semiconductor layer; and wherein the optical unit is arranged to irradiate the Schottky junction with the light through a surface of the semiconductor layer without the electrodes.
地址 Tokyo JP