Manufacturing method for semiconductor device

摘要

A semiconductor device having an improved negative bias temperature instability lifetime characteristic is manufactured by forming a first insulating layer on a substrate, performing a first nitridation on the first insulating layer to form a second insulating layer, and sequentially performing a first and second anneal on the second insulating layer to form a third insulating layer, wherein the second anneal is performed at a higher temperature and with a different gas than the first anneal. A second nitridation is performed on the third insulating layer to form a fourth insulating layer, and a sequential third and fourth anneal on the fourth insulating layer forms a fifth insulating layer. The third anneal is performed at a higher temperature than the first anneal, and the fourth anneal is performed at a higher temperature than the second anneal and with a different gas than the third anneal.

主权项

1. A method for manufacturing a semiconductor device comprising:
forming a first insulating layer on a substrate; forming a second insulating layer by performing a first nitridation on the first insulating layer; forming a third insulating layer by sequentially performing a first anneal and a second anneal on the second insulating layer, the first anneal performed at a first temperature with a stream of a first gas, and the second anneal performed at a second temperature higher than the first temperature with a stream of a second gas different from the first gas; forming a fourth insulating layer by performing a second nitridation on the third insulating layer; and forming a fifth insulating layer by sequentially performing a third anneal and a fourth anneal on the fourth insulating layer, wherein the third anneal is performed at a third temperature higher than the first temperature with a stream of a third gas, and the fourth anneal is performed at a fourth temperature higher than the second temperature with a stream of a fourth gas different from the third gas.