发明名称 |
Approach for bonding dies onto interposers |
摘要 |
A method includes providing an interposer wafer including a substrate, and a plurality of through-substrate vias (TSVs) extending from a front surface of the substrate into the substrate. A plurality of dies is bonded onto a front surface of the interposer wafer. After the step of bonding the plurality of dies, a grinding is performed on a backside of the substrate to expose the plurality of TSVs. A plurality of metal bumps is formed on a backside of the interposer wafer and electrically coupled to the plurality of TSVs. |
申请公布号 |
US8759150(B2) |
申请公布日期 |
2014.06.24 |
申请号 |
US201213488188 |
申请日期 |
2012.06.04 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Hu Hsien-Pin;Yu Chen-Hua;Jeng Shin-Puu;Hou Shang-Yun;Lin Jing-Cheng;Chiou Wen-Chih;Tu Hung-Jung |
分类号 |
H01L21/50 |
主分类号 |
H01L21/50 |
代理机构 |
Slater and Matsil, L.L.P. |
代理人 |
Slater and Matsil, L.L.P. |
主权项 |
1. A method comprising:
bonding a plurality of dies onto a front surface of an interposer wafer, wherein the interposer wafer comprises:
a substrate; anda plurality of through-substrate vias (TSVs) extending from a front surface of the substrate into the substrate; after the step of bonding the plurality of dies, filling a molding compound into gaps between the plurality of dies; grinding the molding compound and a top surface of the plurality of dies; after the step of grinding on the molding compound, performing a grinding on a backside of the substrate to expose the plurality of TSVs; and forming a plurality of metal bumps on a backside of the interposer wafer and electrically coupled to the plurality of TSVs.
|
地址 |
Hsin-Chu TW |