发明名称 Approach for bonding dies onto interposers
摘要 A method includes providing an interposer wafer including a substrate, and a plurality of through-substrate vias (TSVs) extending from a front surface of the substrate into the substrate. A plurality of dies is bonded onto a front surface of the interposer wafer. After the step of bonding the plurality of dies, a grinding is performed on a backside of the substrate to expose the plurality of TSVs. A plurality of metal bumps is formed on a backside of the interposer wafer and electrically coupled to the plurality of TSVs.
申请公布号 US8759150(B2) 申请公布日期 2014.06.24
申请号 US201213488188 申请日期 2012.06.04
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Hu Hsien-Pin;Yu Chen-Hua;Jeng Shin-Puu;Hou Shang-Yun;Lin Jing-Cheng;Chiou Wen-Chih;Tu Hung-Jung
分类号 H01L21/50 主分类号 H01L21/50
代理机构 Slater and Matsil, L.L.P. 代理人 Slater and Matsil, L.L.P.
主权项 1. A method comprising: bonding a plurality of dies onto a front surface of an interposer wafer, wherein the interposer wafer comprises: a substrate; anda plurality of through-substrate vias (TSVs) extending from a front surface of the substrate into the substrate; after the step of bonding the plurality of dies, filling a molding compound into gaps between the plurality of dies; grinding the molding compound and a top surface of the plurality of dies; after the step of grinding on the molding compound, performing a grinding on a backside of the substrate to expose the plurality of TSVs; and forming a plurality of metal bumps on a backside of the interposer wafer and electrically coupled to the plurality of TSVs.
地址 Hsin-Chu TW