发明名称 |
Method of mounting semiconductor chips, semiconductor device obtained using the method, method of connecting semiconductor chips, three-dimensional structure in which wiring is provided on its surface, and method of producing the same |
摘要 |
A method of mounting a semiconductor chip includes: forming a resin coating on a surface of a path connecting a bonding pad on a surface of a semiconductor chip and an electrode pad formed on a surface of an insulating base material; forming, by laser beam machining, a wiring gutter having a depth that is equal to or greater than a thickness of the resin coating along the path for connecting the bonding pad and the electrode pad; depositing a plating catalyst on a surface of the wiring gutter; removing the resin coating; and forming an electroless plating coating only at a site where the plating catalyst remains. |
申请公布号 |
US8759148(B2) |
申请公布日期 |
2014.06.24 |
申请号 |
US201313836706 |
申请日期 |
2013.03.15 |
申请人 |
Panasonic Corporation |
发明人 |
Yoshioka Shingo;Fujiwara Hiroaki |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
Greenblum & Bernstein, P.L.C. |
代理人 |
Greenblum & Bernstein, P.L.C. |
主权项 |
1. A method of mounting a semiconductor chip for electrically connecting a bonding pad, which is provided on a surface of a semiconductor chip disposed on an insulating base material surface, to an electrode pad corresponding to the bonding pad formed on the insulating base material surface, the method comprising:
forming a resin coating on a surface of a path connecting the bonding pad and the electrode pad; forming, by laser beam machining, a wiring gutter having a depth that is equal to or greater than a thickness of the resin coating along the path for connecting the bonding pad and the electrode pad; depositing a plating catalyst or a precursor of the plating catalyst on a surface of the wiring gutter; removing the resin coating by dissolving or swelling the resin coating in a predetermined liquid; and forming, after the resin coating is removed, an electroless plating coating only at a site where the plating catalyst or a plating catalyst formed from the plating catalyst precursor remains.
|
地址 |
Osaka JP |