发明名称 Method of mounting semiconductor chips, semiconductor device obtained using the method, method of connecting semiconductor chips, three-dimensional structure in which wiring is provided on its surface, and method of producing the same
摘要 A method of mounting a semiconductor chip includes: forming a resin coating on a surface of a path connecting a bonding pad on a surface of a semiconductor chip and an electrode pad formed on a surface of an insulating base material; forming, by laser beam machining, a wiring gutter having a depth that is equal to or greater than a thickness of the resin coating along the path for connecting the bonding pad and the electrode pad; depositing a plating catalyst on a surface of the wiring gutter; removing the resin coating; and forming an electroless plating coating only at a site where the plating catalyst remains.
申请公布号 US8759148(B2) 申请公布日期 2014.06.24
申请号 US201313836706 申请日期 2013.03.15
申请人 Panasonic Corporation 发明人 Yoshioka Shingo;Fujiwara Hiroaki
分类号 H01L21/00 主分类号 H01L21/00
代理机构 Greenblum & Bernstein, P.L.C. 代理人 Greenblum & Bernstein, P.L.C.
主权项 1. A method of mounting a semiconductor chip for electrically connecting a bonding pad, which is provided on a surface of a semiconductor chip disposed on an insulating base material surface, to an electrode pad corresponding to the bonding pad formed on the insulating base material surface, the method comprising: forming a resin coating on a surface of a path connecting the bonding pad and the electrode pad; forming, by laser beam machining, a wiring gutter having a depth that is equal to or greater than a thickness of the resin coating along the path for connecting the bonding pad and the electrode pad; depositing a plating catalyst or a precursor of the plating catalyst on a surface of the wiring gutter; removing the resin coating by dissolving or swelling the resin coating in a predetermined liquid; and forming, after the resin coating is removed, an electroless plating coating only at a site where the plating catalyst or a plating catalyst formed from the plating catalyst precursor remains.
地址 Osaka JP