Method for creating monocrystalline piezoresistors

摘要

An electrically insulating sheathing for a piezoresistor and a semiconductor material are provided such that the piezoresistor is able to be used in the high temperature range, e.g., for measurements at higher ambient temperatures than 200° C. A doped resistance area is initially laterally delineated by at least one circumferential essentially vertical trench and is undercut by etching over the entire area. An electrically insulating layer is then created on the wall of the trench and the undercut area, so that the resistance area is electrically insulated from the adjacent semiconductor material by the electrically insulating layer.

主权项

1. A method for creating a piezoresistor in the surface of a semiconductor substrate, comprising:
introducing at least one dopant into a selected surface area in the substrate to form a resistance area; undercutting the resistance area by etching such that the resistance area is laterally delineated by a circumferential, essentially vertical trench; and providing an electrically insulating layer on the resistance area, the wall and the base of the trench, such that the resistance area is electrically insulated from the adjacent semiconductor substrate material by the electrically insulating layer.