Method for making light emitting diode

摘要

A method for making a light emitting diode includes the following steps. A substrate having a first epitaxial growth surface is provided. A carbon nanotube layer is placed on the first epitaxial growth surface of the substrate. A surface of the first semiconductor layer is exposed by removing the substrate and the carbon nanotube layer. The surface of the first semiconductor layer is defined as a second epitaxial growth surface. An active layer and a second semiconductor layer are grown on the second epitaxial growth surface in that order. A surface of the active layer contacted the first semiconductor layer engages with the second epitaxial growth surface. A part of the first semiconductor layer is exposed by etching a part of the active layer and the second semiconductor layer. A first electrode is applied on the first semiconductor layer and a second electrode is applied on the second semiconductor layer.

主权项

1. A method for making a light emitting diode, the method comprising:
providing a substrate having a first epitaxial growth surface; placing a carbon nanotube layer on the first epitaxial growth surface of the substrate; epitaxially growing a first semiconductor layer on the first epitaxial growth surface; exposing a surface of the first semiconductor layer by removing the substrate and the carbon nanotube layer, wherein the surface of the first semiconductor layer is defined as a second epitaxial growth surface; growing an active layer and a second semiconductor layer on the second epitaxial growth surface in that order, wherein a surface of the active layer contacting the first semiconductor layer engages with the second epitaxial growth surface; exposing a part of the first semiconductor layer by etching a part of the active layer and the second semiconductor layer; and applying a first electrode on the first semiconductor layer and applying a second electrode on the second semiconductor layer.