| 发明名称 | Imprint mask, method for manufacturing the same, and method for manufacturing semiconductor device | ||
| 摘要 | According to one embodiment, an imprint mask includes a quartz plate. The quartz plate has a plurality of concave sections formed in part of an upper surface on the quartz plate, and impurities are contained in a portion between the concave sections in the quartz plate. | ||
| 申请公布号 | US8758005(B2) | 申请公布日期 | 2014.06.24 |
| 申请号 | US201113115758 | 申请日期 | 2011.05.25 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Itoh Masamitsu;Kanamitsu Shingo |
| 分类号 | B29C59/16 | 主分类号 | B29C59/16 |
| 代理机构 | Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P. | 代理人 | Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P. |
| 主权项 | 1. An imprint mask, comprising a quartz plate, the quartz plate having a plurality of concave sections formed in part of an upper surface on the quartz plate, impurities being contained in a first portion of the quartz plate between the concave sections, and a concentration profile of the impurities in the first portion and a second portion corresponding to a region immediately under the first portion in the quartz plate has a peak inside the first portion in a thickness direction of the quartz plate. | ||
| 地址 | Tokyo JP | ||