发明名称 COMMON SOURE SEMICONDUCTOR MEMORY APPARATUS
摘要 A semiconductor memory device comprises a cell array including a plurality of normal cell units individually connected between a plurality of bit lines and one common source line; and a common source line compensation circuit to supply a plurality of compensation write currents, to the common source line, for offsetting a plurality of write currents flowing into and out from the common source line through the normal cell units. Therefore, the noise of the common source line can be eliminated because the imbalance of incoming and outgoing current of the common source line due to a data pattern is prevented.
申请公布号 KR20140077325(A) 申请公布日期 2014.06.24
申请号 KR20120145974 申请日期 2012.12.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, CHAN KYUNG;KIM, DONG MIN;HWANG, HONG SUN
分类号 G11C7/10;G11C8/00;G11C11/15 主分类号 G11C7/10
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