| 发明名称 | Apparatuses and methods of operating for memory endurance | ||
| 摘要 | Methods of operating an apparatus such as a computing system and/or memory device for memory endurance are provided. One example method can include receiving m digits of data having a first quantity of digits represented by a first data state that is more detrimental to memory cell wear than a second data state. The m digits of data are encoded into n digits of data having a second quantity of digits represented by the first data state. The value n is greater than the value m. The second quantity is less than or equal to the first quantity. The n digits of data are stored in an apparatus having memory cells. | ||
| 申请公布号 | US8762630(B2) | 申请公布日期 | 2014.06.24 |
| 申请号 | US201313948830 | 申请日期 | 2013.07.23 |
| 申请人 | Micron Technology, Inc. | 发明人 | Varanasi Chandra C. |
| 分类号 | G06F12/00 | 主分类号 | G06F12/00 |
| 代理机构 | Brooks, Cameron & Huebsch, PLLC | 代理人 | Brooks, Cameron & Huebsch, PLLC |
| 主权项 | 1. A method, comprising: encoding m digits of data into n digits of data, n being greater than m, the m digits of data having a first quantity of digits represented by a first data state that is more detrimental to memory cell wear than a second data state; and storing the n digits of data in an apparatus having memory cells. | ||
| 地址 | Boise ID US | ||