Teramos-terahertz thermal sensor and focal plane array

摘要

A TeraMOS sensor based on a CMOS-SOI-MEMS transistor, thermally isolated by the MEMS post-processing, designed specifically for the detection of THz radiation which may be directly integrated with the CMOS-SOI readout circuitry, in order to achieve a breakthrough in performance and cost. The TeraMOS sensor provides a low-cost, high performance THz passive or active imaging system (roughly in the range of 0.5-1.5 THz) by combining several leading technologies: Complementary Metal Oxide Semiconductor (CMOS)-Silicon on Insulator (SOI), Micro Electro Mechanical Systems (MEMS) and photonics. An array of TeraMOS sensors, integrated with readout circuitry and driving and supporting circuitry provides a monolithic focal plane array or imager. This imager is designed in a commercial CMOS-SOI Fab and the MEMS micromachining is provided as post-processing step in order to reduce cost. Thus the CMOS transistors and technology provide the sensors as well as the signal processing and additional readout circuitry both in the pixels as well as around the sensor array.

主权项

1. A device comprising: a single crystal silicon-on-insulator (SOI) bulk layer; at least one thermally isolated Metal Oxide Semiconductor transistor (TeraMOS transistor) with temperature dependent electrical parameters; an absorption structure for the absorption of terahertz radiation; wherein the absorption structure comprises a perforated platform that is bigger than each of the at least one TeraMOS transistor; electrical and thermal conductors independently connecting said at least one TeraMOS transistor to said single crystal SOI bulk layer; and CMOS circuitry with readout circuits for sensor signal multiplexing, amplification and processing, wherein said absorption structure absorbs terahertz radiation and heats the at least one TeraMOS transistor that transduces temperature changes into an electrical signal.