Semiconductor device

摘要

Plural island-form emitter cells (22) having a p-base region (23) and an n+ emitter region (24) are provided, distanced from each other, on a main surface of an n− layer (21). A trench (25) deeper than the p-base region (23) is formed on either side of the emitter cell (22). A first gate electrode (26) is embedded in the trench (25) across a first gate insulating film (41). A second gate electrode (27) that electrically connects first gate electrodes (26) is provided, across a second gate insulating film (40), on a surface of a region of the p-base region (23) sandwiched by the n+ emitter region (24). A conductive region (28) that electrically connects second gate electrodes (27) is provided, across a third gate insulating film (42), on a surface of the n− layer (21). A contact region (29) that is isolated from the second gate electrode (27), and that short circuits the n+ emitter region (24) and p-base region (23), is provided.

主权项

1. A semiconductor device, characterized by comprising:
a first conductivity type semiconductor layer; a plurality of island-form cells provided distanced from each other on a first main surface of the first conductivity type semiconductor layer; a second conductivity type semiconductor region provided in the cell; a first conductivity type semiconductor region provided in the second conductivity type semiconductor region; a first insulating film provided inside a trench deeper than the second conductivity type semiconductor region formed on either side of the cell; a first electrode embedded in the trench across the first insulating film; a second insulating film provided on a surface of a region of the second conductivity type semiconductor region sandwiched by the first conductivity type semiconductor region; a second electrode, formed on the second insulating film, that electrically connects first electrodes; a third insulating film provided on a surface of the first conductivity type semiconductor layer; a conductive region, formed on the third insulating film, that electrically connects second electrodes; and a contact region that is isolated from the second electrode, and that short circuits the second conductivity type semiconductor region and the first conductivity type semiconductor region provided in the region, wherein the first conductivity type semiconductor layer is exposed on the first main surface.