Non-volatile memory device with vertical memory cells

摘要

A non-volatile memory device includes a plurality of gate electrodes stacked over a semiconductor substrate and stretched in a first direction along the semiconductor substrate and a plurality of junction layers having a first region protruding from the semiconductor substrate and crossing the gate electrodes and a second region formed between the gate electrodes.

主权项

1. A non-volatile memory device, comprising:
a plurality of gate electrodes stacked in a vertical direction from a semiconductor substrate and extended to a first direction along the semiconductor substrate; and a plurality of junction layers having a first region protruding from the semiconductor substrate and extended to a second direction that crosses the gate electrodes, and a second region formed between the gate electrodes, wherein the gate electrodes and the second region are extended in the vertical direction from the semiconductor substrate, wherein the first region and the second region comprise polysilicon.