| 摘要 |
A Schottky diode includes an n+-substrate, an n-epilayer, trenches introduced into the n-epilayer, floating Schottky contacts being located on their side walls and on the entire trench bottom, mesa regions between the adjacent trenches, a metal layer on its back face, this metal layer being used as a cathode electrode, and an anode electrode on the front face of the Schottky diode having two metal layers, the first metal layer of which forms a Schottky contact and the second metal layer of which is situated below the first metal layer and also forms a Schottky contact. Preferably, these two Schottky contacts have different barrier heights. |
| 主权项 |
1. A Schottky diode, comprising:
an n+-substrate; an n-epilayer; trenches introduced into the n-epilayer; mesa regions between adjacent trenches; a metal layer on a back face of the diode, the metal layer being used as a cathode electrode; an anode electrode provided on a front face of the diode, the anode electrode having two metal layers, a first metal layer forming a Schottky contact, and a second metal layer being situated below the first metal layer and also forming a Schottky contact; and additional, floating Schottky contacts situated on walls of the trenches between the second metal layer and bottoms of the trenches.
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