发明名称 |
Infrared sensor and infrared array sensor |
摘要 |
An infrared sensor includes a MOSFET sensor, and a current source MOSFET which is connected to the MOSFET sensor in series and constitutes a constant current source for driving the MOSFET sensor with a constant current, wherein a terminal between the MOSFET sensor and the current source MOSFET constitutes a sensor output terminal, the MOSFET sensor is disposed on a heat-insulated structure, the current source MOSFET is disposed outside the heat-insulated structure, and the MOSFET sensor and the current source MOSFET are constituted by a same conductivity type MOSFET and operate in a subthreshold region. |
申请公布号 |
US8759772(B2) |
申请公布日期 |
2014.06.24 |
申请号 |
US201213350875 |
申请日期 |
2012.01.16 |
申请人 |
Ricoh Company, Ltd. |
发明人 |
Noguchi Hidetaka;Watanabe Hirofumi |
分类号 |
G01J5/20 |
主分类号 |
G01J5/20 |
代理机构 |
Cooper & Dunham LLP |
代理人 |
Cooper & Dunham LLP |
主权项 |
1. An infrared sensor, comprising:
a MOSFET sensor; and a current source MOSFET which is connected to the MOSFET sensor in series and constitutes a constant current source for driving the MOSFET sensor with a constant current, wherein a terminal between the MOSFET sensor and the current source MOSFET constitutes a sensor output terminal, the MOSFET sensor is disposed on a heat-insulated structure, the current source MOSFET is disposed outside the heat-insulated structure, and the MOSFET sensor and the current source MOSFET are constituted by a same conductivity type MOSFET and operate in a subthreshold region, wherein the MOSFET sensor includes a gate-drain short-circuit and the current source MOSFET includes a gate-source short-circuit, and when a voltage between the gate and the source is the same in the MOSFET sensor and the current source MOSFET, a current in the subthreshold region of the MOSFET sensor is set to be smaller than a current in the subthreshold region of the current source MOSFET.
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地址 |
Tokyo JP |