| 发明名称 | Optoelectronic semiconductor chip with gas-filled mirror | ||
| 摘要 | An optoelectronic semiconductor chip includes a semiconductor body containing an active region, a mirror layer, and contact points arranged between the semiconductor body and the mirror layer and providing a spacing D between the semiconductor body and the mirror layer, whereby at least one cavity is formed between the mirror layer and the semiconductor body and the at least one cavity contains a gas. | ||
| 申请公布号 | US8761219(B2) | 申请公布日期 | 2014.06.24 |
| 申请号 | US200913002352 | 申请日期 | 2009.08.05 |
| 申请人 | OSRAM Opto Semiconductors GmbH | 发明人 | Grolier Vincent;Plössl Andreas |
| 分类号 | H01S5/20 | 主分类号 | H01S5/20 |
| 代理机构 | DLA Piper LLP (US) | 代理人 | DLA Piper LLP (US) |
| 主权项 | 1. An optoelectronic semiconductor chip comprising: a semiconductor body containing an active region, a mirror layer, and contact points arranged between the semiconductor body and the mirror layer and providing a spacing D between the semiconductor body and the mirror layer, whereby at least one cavity is formed between the mirror layer and the semiconductor body and the at least one cavity contains a gas, wherein 1) the semiconductor body is free of a material of the mirror layer and the mirror layer projects beyond all of the contact points in a lateral direction, and 2) the lateral direction runs parallel to an area of a main extension of a topside of the semiconductor body. | ||
| 地址 | DE | ||