Forming array contacts in semiconductor memories

摘要

Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.

主权项

1. A semiconductor device comprising:
a semiconductor memory array; a dielectric material over said memory array; a plurality of parallel spaced filled trenches in said dielectric material; a plurality of spaced openings along the length of each said trenches; and array contacts formed in said plurality of openings.