Plating process and structure

摘要

A system and method for plating a contact is provided. An embodiment comprises forming protective layers over a contact and a test pad, and then selectively removing the protective layer over the contact without removing the protective layer over the test pad. With the protective layer still on the test pad, a conductive layer may be plated onto the contact without plating it onto the test pad. After the contact has been plated, the protective layer over the contact may be removed.

主权项

1. A method for manufacturing a semiconductor device, the method comprising:
forming a first protective layer from a first portion of a contact located on a substrate; forming a second protective layer from a second portion of a test pad located on the substrate, wherein the test pad is in electrical contact with the contact; selectively removing the first protective layer without removing the second protective layer; and plating the contact with a conductive material while the second protective layer remains on the test pad.