| 摘要 |
<p>A vertical type semiconductor device and a fabrication method thereof are suggested. A vertical type semiconductor device according to one embodiment of the present invention includes a common source region which is formed in the cell region of the semiconductor substrate, a channel region which is formed with a designated height to have a first diameter on the common source region, a drain region which is formed with a designated height to have a second diameter which is greater than the first diameter, and a first gate electrode which is formed to surround the channel region.</p> |
