| 发明名称 | 3-D structured non-volatile memory device and method of manufacturing the same | ||
| 摘要 | A non-volatile memory device includes channel structures that each extend in a first direction, wherein the channel structures each include channel layers and interlayer dielectric layers that are alternately stacked; source structure extending in a second direction crossing the first direction and connected to ends of the channel structures, wherein the source structure includes source lines and interlayer dielectric layers that are alternately stacked; and word lines extending in the second direction and formed to surround the channel structures. | ||
| 申请公布号 | US8760934(B2) | 申请公布日期 | 2014.06.24 |
| 申请号 | US201213397024 | 申请日期 | 2012.02.15 |
| 申请人 | Hynix Semiconductor Inc. | 发明人 | Shin Hack Seob;Oh Sang Hyun |
| 分类号 | G11C16/04 | 主分类号 | G11C16/04 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A non-volatile memory device, comprising: channel structures that each extend in a first direction, wherein the channel structures each include channel layers and interlayer dielectric layers that are alternately stacked; a source structure extending in a second direction crossing the first direction and connected to ends of the channel structures, wherein the source structure includes source lines and interlayer dielectric layers that are alternately stacked; and word lines extending in the second direction and formed to surround the channel structures. | ||
| 地址 | Gyeonggi-do KR | ||