Solid state imaging apparatus with a shared drain diffusion layer by adjacent cells

摘要

While a drain power source of a reset transistor and a drain power source of an amplifying transistor are separated, the load of drain power source can be reduced by sharing a drain diffusion layer of the reset transistor and a drain diffusion layer of the amplifying transistor by adjacent cells in sharing pixel units. Further, an efficient pixel layout is provided by reducing the number of routing wires.

主权项

1. A solid state imaging apparatus, comprising:
a cell in which K (K is an integer equal to 2 or greater) pixels are provided; an amplifying transistor that is shared by the K pixels and amplifies signals read from the pixels; a reset transistor that is shared by the K pixels and resets the signals read from the pixels; and a row scanning circuit that drives a drain of the reset transistor separately between different rows while separating a drain power source of the reset transistor and the drain power source of the amplifying transistor, wherein a drain diffusion layer of the reset transistor and the drain diffusion layer of the amplifying transistor are shared by the different adjacent cells in a vertical direction.