发明名称 Electronic devices and thermal image sensors that utilize embedded quantum dots
摘要 Integrated circuit devices include thermal image sensors that utilize quantum dots therein to provide negative resistance characteristics to at least portions of the sensors. The thermal image sensor may include a sensing unit configured to absorb radiation incident on a first surface thereof and first and second electrodes electrically coupled to the sensing unit. The sensing unit includes a plurality of quantum dots therein, which may extend between the first and second electrodes. These quantum dots may be configured to impart a negative resistance characteristic to the sensing unit. In particular, the sensing unit may include a sensing layer having first and second opposing ends, which are electrically coupled to the first and second electrodes, respectively, and the plurality of quantum dots may be distributed within the sensing layer.
申请公布号 US8759936(B2) 申请公布日期 2014.06.24
申请号 US201113051199 申请日期 2011.03.18
申请人 Samsung Electronics Co., Ltd. 发明人 Cho Choong Rae
分类号 H01L31/00 主分类号 H01L31/00
代理机构 Myers Bigel Sibley & Sajovec, P.A. 代理人 Myers Bigel Sibley & Sajovec, P.A.
主权项 1. A thermal image sensor, comprising: a first sensing unit configured to absorb radiation incident on a first surface thereof, said first sensing unit having a first plurality of quantum dots therein; first and second electrodes electrically coupled to said first sensing unit; a second sensing unit coupled to the first sensing unit and configured to absorb radiation incident on a first surface thereof, said second sensing unit having a second plurality of quantum dots therein; and third and fourth electrodes electrically coupled to said second sensing unit, wherein the first sensing unit has a different negative resistance characteristic than the second sensing unit.
地址 KR