Nonvolatile semiconductor memory device

摘要

According to one embodiment, a nonvolatile semiconductor memory device includes a stacked structural unit, a semiconductor pillar, a memory layer, an inner insulating film, an outer insulating film and a cap insulating film. The unit includes a plurality of electrode films stacked alternately in a first direction with a plurality of inter-electrode insulating films. The pillar pierces the stacked structural unit in the first direction. The memory layer is provided between the electrode films and the semiconductor pillar. The inner insulating film is provided between the memory layer and the semiconductor pillar. The outer insulating film is provided between the memory layer and the electrode films. The cap insulating film is provided between the outer insulating film and the electrode films, and the cap insulating film has a higher relative dielectric constant than the outer insulating film.

主权项

1. A nonvolatile semiconductor memory device, comprising:
a plurality of semiconductor layers, each of the semiconductor layers extending in a first direction, the semiconductor layers being apart from each other in at least one of a second direction and a third direction, the second direction being perpendicular to the first direction, the third direction being perpendicular to the first direction and crossing the second direction, a plurality of electrode films; a plurality of inter-electrode insulating films, the electrode films being provided alternately in the first direction with the inter-electrode insulating films; a memory layer provided between at least one of the electrode films and at least one of the semiconductor layers; an inner insulating film provided between the memory layer and the at least one of the semiconductor layers; an outer insulating film provided between the memory layer and the at least one of the electrode films; and a cap insulating film provided between the outer insulating film and the at least one of the electrode films, the cap insulating film having a relative dielectric constant higher than a relative dielectric constant of the outer insulating film.