Method of making diode having reflective layer

摘要

A method of forming a light emitting diode includes forming a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. A scribe line is formed on the substrate for separating the diodes on the substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.

主权项

1. A method of making light emitting diodes comprising:
providing a substrate having a first side and a second side opposite to the first side; forming a buffer layer on the first side of the substrate; forming a first-type semiconductor layer on the buffer layer; forming an active layer on the first-type semiconductor layer; forming a second-type semiconductor layer on the active layer; forming a first contact structure on a surface of the second-type semiconductor layer; forming a second contact structure on the first-type semiconductor layer facing the same direction of the first contact structure; and reducing a thickness of the substrate to be less than 350 μm, wherein the first contact structure comprises a structure that includes metallic elements that order proceeds from the surface of the second-type semiconductor layer, the structure is selected from:
a first structure that is arranged in the order of ITO, Au, Ni, and Au;a second structure that is arranged in the order of ITO, Au, Pd, and Au;a third structure that is arranged in the order of ITO, Ni, Pd, and Au; anda fourth structure that is arranged in the order of ITO, Pt, and Au.