Reference voltage generators for integrated circuits

摘要

A reference voltage generator circuit may include at least one MOS transistor and at least one bipolar transistor coupled together to provide an electrical path from an input reference potential to an output of the generator circuit. The electrical path may extend through a gate-to-source path of the MOS transistor and further through a base-to-emitter path of the bipolar transistor. The MOS transistor may be biased by a bias current that is proportional to T2·μ(T), where T represents absolute temperature and μ(T) represents mobility of a MOS transistor in the bias current generator. Optionally, the reference voltage generator may include N MOS and M multiple bipolar transistors (N≧1, M≧1), and the output reference voltage may be N*VGS+M*VBE as compared to the input reference potential.

主权项

1. A reference voltage generator circuit, comprising:
a MOS transistor and a bipolar transistor coupled together to provide an electrical path from a reference potential to an output of the generator circuit that extends through a gate-to-source path of the MOS transistor and further through a base-to-emitter path of the bipolar transistor, wherein the MOS transistor has an associated gate-to-source voltage VGS, a bias current generator providing a bias current to the MOS transistor that is proportional to T2·μ(T), where T represents absolute temperature and μ(T) represents mobility of a MOS transistor in the bias current generator, and the output providing a reference voltage that is approximately temperature independent.