Barrier and planarization layer for thin-film photovoltaic cell

摘要

Thin film photovoltaic cells and methods of manufacturing such cells that include one or more diffusion barrier layers configured to provide a relatively smooth growth surface for subsequent deposition of a p-type semiconductor layer. Diffusion barrier layers according to the present teachings may be amorphous, microcrystalline or nanocrystalline layers of materials including molybdenum, conductive oxides, conductive nitrides, conductive carbides, or mixtures thereof. In some cases a diffusion barrier layer may be configured to have surface roughness less than a predetermined threshold value.

主权项

1. A thin-film photovoltaic cell, comprising:
an electrically conductive substrate including substrate components selected from the group consisting of iron and chromium; a first diffusion barrier layer including an amorphous molybdenum layer disposed above the substrate; a rear electrode layer formed of polycrystalline molybdenum formed upon the diffusion barrier layer; a p-type semiconductor layer disposed above the rear electrode layer; an n-type semiconductor layer disposed above the p-type semiconductor layer; a front electrode layer disposed above the n-type semiconductor layer; and a collection grid disposed above the front electrode layer.