ATOMIC LAYER DEPOSITION APPARATUS

摘要

An atomic layer deposition apparatus according to the present invention comprises a chamber having a sealed reaction space formed therein; a first gas intake and exhaust unit for supplying or exhausting first gas relative to a substrate supplied to the inside of the chamber; and a second gas intake and exhaust unit for supplying or exhausting second gas relative to the substrate, wherein the substrate may be provided to have a relative motion in the direction intersecting with the longitudinal direction of at least one of the first and second gas intake and exhaust units. As described above, the atomic layer deposition apparatus can improve throughput of an atomic layer deposition process without needing an additional means for exhausting or sucking gas by performing exhaust and intake of gas through just one unit.