| 摘要 |
A thermoelectric device is provided. A first electrode and a second electrode are provided on a substrate. A first leg including first semiconductor patterns and at least one first barrier pattern is provided on the first electrode. A second leg including second semiconductor patterns and at least one second barrier pattern is provided on the second electrode. A third electrode is provided on the first leg and the second leg. The first barrier pattern includes a metal-semiconductor compound between the first semiconductor patterns and a first metal, and the second barrier pattern includes a metal-semiconductor compound between the second semiconductor patterns and a second metal. A work function of the second metal is larger than a work function of the first metal. |
