ATOMIC LAYER DEPOSITION APPARATUS

摘要

An atomic layer deposition apparatus according to the present invention comprises a gas intake and exhaust unit including a gas supply pipe having a gas supply channel formed therein, a gas exhaust pipe having a pressure relieving part formed therein and communicated with the gas supply channel, and a gas intake pipe surrounding at least a part of the outer circumferential surface of the gas exhaust pipe to form a gas intake channel therein; and a gas injection pressure controlling unit connected to the gas supply channel or the pressure relieving part and supplying gas so that the pressure of exhaust gas from the gas exhaust pipe is uniform over the entire length of the gas exhaust pipe, thereby controlling gas to be injected at uniform pressure or in a uniform amount.