POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

The present invention relates to a power semiconductor device and a method for manufacturing the same. The power semiconductor device according to one embodiment of the present invention includes a first conductivity type body region; a second conductivity type wall which is formed in the upper part of the body region; and a conductive via which crosses the wall and is formed in the body region. According to one embodiment of the present invention, the conductive via penetrates the body region.