ATOMIC LAYER DEPOSITION APPARATUS

摘要

An atomic layer deposition apparatus according to the present invention comprises a chamber having a sealed reaction space formed therein; a first gas intake and exhaust unit for sucking or exhausting first gas relative to a substrate supplied to the inside of the chamber; a second gas intake and exhaust unit for sucking or exhausting second gas relative to the substrate; and a vacuum exhaust pipe provided between the first gas intake and exhaust unit and the second gas intake and exhaust unit for forming a vacuum between the first gas intake and exhaust unit and the second gas intake and exhaust unit, wherein the substrate may be provided to have a relative motion in the direction intersecting with the longitudinal direction of at least one among the first and second gas intake and exhaust units and the vacuum exhaust pipe. As described above, the atomic layer deposition apparatus can improve throughput of an atomic layer deposition process without needing an additional means for exhausting or sucking gas by performing exhaust and intake of gas through just one unit.