垂直式单电晶体无电容式动态随机存取记忆单元及其制造方法,申请号TW100115020-传众专利搜索

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发明名称	垂直式单电晶体无电容式动态随机存取记忆单元及其制造方法
摘要
申请公布号	TWI442517	申请公布日期	2014.06.21
申请号	TW100115020	申请日期	2011.04.29
申请人	国立中山大学高雄市西子湾莲海路70号	发明人	林吉聪;陈钲欣
分类号	H01L21/8239;H01L27/108	主分类号	H01L21/8239
代理机构		代理人	蔡东贤台北市松山区敦化北路201号7楼
主权项
地址	高雄市西子湾莲海路70号

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