| 摘要 |
FIELD: chemistry.SUBSTANCE: method involves growing, on the surface of a semiconductor plate, a protective layer on which a mask with opened windows of a given size is deposited, followed by irradiation of the surface of the semiconductor plate with an ion stream through the mask and the protective layer, which enables to obtain an amorphous layer in the semiconductor plate with the opened windows in the mask. Before removal, the obtained amorphous layer is oxidised; the oxides are then removed and the protective layer and the mask are also removed from the surface of the semiconductor plate.EFFECT: use of the method considerably increases area of the structured surface of semiconductor plates with orderly arranged nanosized inoculating regions, widens the range of dimensions and maintains given dimensions of inoculating regions, protects the surface of the semiconductor plate from contamination.9 cl, 2 dwg |
