发明名称 |
SINGLE-CRYSTAL SILICON-CARBIDE SUBSTRATE AND POLISHING SOLUTION |
摘要 |
<p>The present invention relates to a single-crystal silicon-carbide substrate provided with a principal surface having an atomic step-and-terrace structure containing atomic steps and terraces derived from a crystal structure, in which the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less.</p> |
申请公布号 |
KR20140076566(A) |
申请公布日期 |
2014.06.20 |
申请号 |
KR20147008976 |
申请日期 |
2012.10.02 |
申请人 |
ASAHI GLASS COMPANY LTD. |
发明人 |
YOSHIDA IORI;TAKEMIYA SATOSHI;TOMONAGA HIROYUKI |
分类号 |
C30B29/36;C09K3/14;C30B33/10;H01L21/304 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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