发明名称 |
METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY UNIT |
摘要 |
A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region. |
申请公布号 |
KR101410402(B1) |
申请公布日期 |
2014.06.20 |
申请号 |
KR20070044602 |
申请日期 |
2007.05.08 |
申请人 |
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发明人 |
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分类号 |
H01L21/20;H01L21/336;H01L29/786;H01L51/50 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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