| 摘要 |
The present invention relates to a method of forming a copper wire which is capable of making the copper wire have low resistance while sufficiently embedding the copper wire. A method of forming a copper wire by embedding a trench in a wafer including an interlayer dielectric layer containing Si and having a trench of a predetermined pattern formed on a surface of the interlayer dielectric layer, includes the following processes of forming a Mn layer at least on a surface of the trench through CVD, wherein the Mn layer serves as a self-aligned barrier layer in reaction with a substrate; embedding a copper layer formed through PVD in the trench; and forming the copper wire in the trench by polishing an entire surface through CMP. |
